Characterization of Mo/Si multilayer growth on stepped topographies

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چکیده

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ژورنال

عنوان ژورنال: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

سال: 2011

ISSN: 2166-2746,2166-2754

DOI: 10.1116/1.3628640